u , d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STW7NA100 n - channel enhancement mode power mos transistors type STW7NA100 vdss 1000 v rds(on) < 1.7q id 7 a typical rds(on) = 1.45 q 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c gate charge minimised reduced threshold voltage spread applications . high current, high speed switching . switch mode power supply (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive to-247 internal schematic diagram d(2) absolute maximum ratings symbol vds vdgr vgs id id !dm(?) plot viso tslq tj parameter drain-source voltage (vgs = 0) drain- gate voltage (ros = 20 kfl) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max, operating junction temperature value STW7NA100 1000 1000 30 7 4.4 2b 190 1.52 ? -65 to 150 150 unit v v v a a a w w/c v c c ?) pulse width limited by safe operating area quality semi-conductors
thermal data rthj-case rlhj-amb rthc-sink i, thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-247 0.65 30 0.1 300 c/w c/w c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 6 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 50 v) max value 7 800 unit a mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vos = 0) gate-body leakage current (vos = 0) test conditions id = 250 ua vgs = 0 vds = max rating vds = max rating tc=100c vgs = 30 v win. 1000 typ. max. 50 250 100 unit v ha ha na on(*) symbol vos(th) rds(on) id(oci) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 250 (ia vgs = 10v id = 3. 5 a vds > lo(on) x ros(on)max vgs= 10 v min. 2.25 7 typ. 3 1.45 max. 3.75 1.7 unit v n a a dynamic symbol 9f? (*) cjss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > ld(on) x rds(on)max id = 3.5 a vds = 25 v f = 1 mhz vgs = 0 min. 5 typ. 7 3170 270 76 max. 4100 351 99 unit s pf pf pf
electrical characteristics (continued) switching on symbol td(on) tr qfl qgs qgd parameter turn-on time rise time total gate charge gate-source charge gate-drain charge test conditions vdd=500v lo = 3.5 a rg = 4.7i vgs = 10v vdd = 800v id = 7a vgs=10v min. typ. 28 19 125 17 58 max. 40 27 150 unit ns ns nc nc nc switching off symbol tr(voff) tf tc parameter off-voltage rise time fall time cross-over time test conditions vdd = 800 v id = 7a rg = 4.7i vgs = 10v min. typ. 35 15 55 max. 50 21 77 unit ns ns ns source drain diode symbol isd !sdm(?) vsd(*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 7 a vgs = 0 isd = 7 a di/dt = 100 a/u.s vod = 100 v tj = 150 c min. typ. 835 14 33 max. 7 28 1.6 unit a a v ns uc a (?) pulsed: pulse duration = 300 us, duty cycle 1.5% (?) pulse width limited by safe operating area to-247 mechanical data dim. a 0 e f f3 f4 g h l l3 l4 l5 m dia mm min. 4.7 2.2 0.4 1 2 3 15.3 19.7 14.2 2 3.55 typ. 10.9 34.6 5.5 max. 5.3 2.6 o.e 1.4 2.4 3.4 15.9 20.3 14.8 3 3.65 inch min. 0.185 0.087 0.0 16 0.039 0.079 0.118 0602 0776 0.559 0.079 0.140 typ. 0.429 0.413 1.362 0.217 max 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 0.144 l4 ^ 1 dia. j*-, a ^ > c -t h ~- ?\ ^ f3 f
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